PART |
Description |
Maker |
MMG3012NT1-12 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor...
|
MMG3010NT1 MMG3010NT108 |
Heterojunction Bipolar Transistor (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MMG3007NT1 MMG3007NT108 |
Heterojunction Bipolar Transistor (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MMG3001NT108 MMG3001NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor... Freescale Semiconductor, Inc
|
MMG3002NT1 MMG3002NT108 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MMG3004NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
MMG3013NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
MMG3002NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
MOTOROLA[Motorola, Inc]
|
MMA20312B |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor...
|
MT3S111TU |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
Toshiba, Corp.
|
IMZ2A |
COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS
|
Pan Jit International Inc.
|